Gallium nitride-based active current flowback prevention

Abstract

An improved current flowback prevention device that uses a Gallium Nitride (GaN) device or transistor to mitigate the effects of short circuits is described herein. For example, a GaN device may have an ideal diode-like behavior during reverse conduction. This characteristic of the GaN device can be used to protect electrical systems against short circuit incidents caused by upstream circuits or electronic components. As an illustrative example, a power regulator may be injecting current towards a direct current (DC) bus. While the power regulator is operating normally, the gate of the GaN device may be kept high to allow current to pass through the GaN device from the power regulator to the DC bus. If a short circuit event occurs, the gate of the GaN device may no longer receive a high signal and prevent current from passing through the GaN device.