The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Jun. 26, 2024
Macronix International Co., Ltd., Hsinchu, TW;
Chih-Wei Hu, Miaoli County, TW;
Chih-Chang Hsieh, Hsinchu City, TW;
Teng-Hao Yeh, Hsinchu County, TW;
Hang-Ting Lue, Hsinchu County, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A soft programming method and an erasing method for a memory device having n (positive integer) word lines are provided. The soft programming method includes: applying m (positive integer) programming pulses to the j-th word line of the n word lines, where j is a positive integer smaller than n; and determining an initial value of a programming pulse applied to the (j+1)-th to the n-th word lines based on a verification result of applying the m programming pulses to the j-th word line. When the i-th programming pulse, among the m programming pulses applied to the j-th word line, passes verification, the i-th programming pulse is set as the initial value of the programming pulse for the (j+1)-th to the n-th word lines, where i=1 to m. This method is also applicable to a 3D NAND flash memory. The memory device has high capacity and high performance.