The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Feb. 14, 2023
National Tsing Hua University, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu City, TW;
Abstract
A semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal made of a first compound M1C1, a core layer, and a barrier layer grown in such order. The seed crystal has first regions that are inactive with oxygen, and second regions that are easily reactive with oxygen. The core layer is made of the first compound M1C1, and has first and second areas. Each of the first areas is positioned on a corresponding one of the first regions. Each of the second areas is positioned on a corresponding one of the second regions. Each of the first areas has a thickness greater than that of each of the second areas. The barrier layer is made of a second compound selected from M1X1 and X2C1. The shell is grown on the barrier layer, and is made of a third compound M2C2.