The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Apr. 29, 2022
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Yiqi Tang, Allen, TX (US);

Rajen Manicon Murugan, Dallas, TX (US);

Juan Alejandro Herbsommer, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49822 (2013.01); H01L 23/66 (2013.01); H01L 23/3121 (2013.01); H01L 24/16 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/16227 (2013.01);
Abstract

One example includes a method for fabricating a substrate-integrated waveguide (SIW). The method includes forming a first metal layer on a carrier surface. The first metal layer can extend along an axis. The method also includes forming a first metal sidewall extending from a first edge of the first metal layer along the axis and forming a second metal sidewall extending from a second edge of the first metal layer opposite the first edge along the axis to form a trough extending along the axis. The method also includes providing a dielectric material over the first metal layer and over the first and second metal sidewalls. The method further includes forming a second metal layer over the dielectric material and over the first and second metal sidewalls. The second metal layer can extend along the axis to enclose the SIW in all radial directions along the axis.


Find Patent Forward Citations

Loading…