The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Feb. 28, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seonghun Lim, Hwaseong-si, KR;

Wookyung You, Hwaseong-si, KR;

Kyoungwoo Lee, Hwaseong-si, KR;

Juyoung Jung, Yongin-si, KR;

Il Sup Kim, Suwon-si, KR;

Chin Kim, Seongnam-si, KR;

Kyoungpil Park, Yongin-si, KR;

Jinhyung Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); H10D 1/47 (2025.01); H10D 84/80 (2025.01); H10D 88/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/498 (2026.01); H10D 1/47 (2025.01); H10D 1/474 (2025.01); H10D 84/811 (2025.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01); H10D 84/817 (2025.01); H10D 88/00 (2025.01);
Abstract

A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer, and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.


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