The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Feb. 08, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ji Hyung Kim, Suwon-si, KR;

Jae Hee Oh, Suwon-si, KR;

Je Gwan Hwang, Suwon-si, KR;

Jeong Hoon Ahn, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10D 84/834 (2025.01);
Abstract

A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface; an active pattern extending in a first direction on the first surface of the substrate; a first source/drain contact including a first portion connected to a source/drain region of the active pattern, and a second portion extending from the first portion in the first direction or in a second direction intersecting the first direction; a power rail providing a voltage on the second surface of the substrate; a through electrode connected to the power rail and penetrating the substrate; and a landing pad connecting the through electrode and the second portion of the source/drain contact.


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