The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

May. 26, 2023
Applicant:

Tencent Technology (Shenzhen) Company Limited, Shenzhen, CN;

Inventors:

Dengfeng Li, Shenzhen, CN;

Wenlong Zhang, Shenzhen, CN;

Kunliang Bu, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); B81B 7/00 (2006.01); H10N 60/01 (2023.01); H10N 69/00 (2026.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10W 20/023 (2026.01); H10W 20/20 (2026.01);
Abstract

A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.


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