The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Jul. 14, 2023
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Francis J. Kub, Arnold, MD (US);
Travis J. Anderson, Alexandria, VA (US);
Mona A. Ebrish, Nashville, TN (US);
Alan G. Jacobs, Rockville, MD (US);
Karl D. Hobart, Alexandria, VA (US);
Abstract
According to some embodiments of the present disclosure, methods of forming a semiconductor device on a semiconductor layer having opposing first and second surfaces are disclosed. An n-type doped region including an n-type dopant may be formed at the first surface of the semiconductor layer. A p-type dopant source layer including a p-type dopant may be formed on the n-type doped region. The p-type dopant may be diffused from the p-type dopant source layer through the n-type doped region into the semiconductor layer to form a p-type doped region of the semiconductor layer, and the p-type doped region of the semiconductor layer may be between the n-type doped region and the second surface of the semiconductor layer. After diffusing the p-type dopant, the p-type dopant source layer may be removed.