The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Apr. 30, 2021
Applicant:

Korea Electrotechnology Research Institute, Changwon-si, KR;

Inventors:

Ho Sup Kim, Gimhae-si, KR;

Sang Soo Oh, Gimhae-si, KR;

Hong Soo Ha, Changwon-si, KR;

Jeong Hyeon Jo, Changwon-si, KR;

Gwan Tae Kim, Gimhae-si, KR;

Hyun Woo Noh, Changwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/01 (2023.01); H10N 60/83 (2023.01); H10N 60/85 (2023.01); C23C 14/16 (2006.01); C23C 14/24 (2006.01);
U.S. Cl.
CPC ...
H10N 60/0576 (2023.02); H10N 60/83 (2023.02); H10N 60/85 (2023.02); C23C 14/16 (2013.01); C23C 14/24 (2013.01);
Abstract

Proposed are a thin film having an excellent crystal orientation property, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film. The technical gist of the present disclosure includes a thin film having a single-crystal-level crystal orientation property, which is formed by depositing a polycrystalline second material on an upper portion of a substrate including a polycrystalline first material and which has a crystal orientation property satisfying the following Relational Expression 1 at a grain boundary, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film.0°<FWHM≤3°  [Relational Expression 1]


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