The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Mar. 22, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Oscar Van Der Straten, Guilderland Center, NY (US);

Praneet Adusumilli, Somerset, NJ (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract

A MRAM Cell including a dielectric cap and a lower section that includes a bottom electrode, a synthetic anti-ferromagnet layer, and a reference layer, where in the sidewalls of each of the bottom electrode, the synthetic anti-ferromagnet layer, and the reference layer are angled relative to the vertical plane perpendicular to a top surface of the dielectric cap. A first dielectric liner located on the sidewalls of each of the lower section. An upper section that includes a tunnel barrier, a free layer, and a top electrode. A second dielectric liner located on a side section of the tunnel barrier, where the second dielectric liner is comprised of a second material, and where the angled side sections of the tunnel barrier are located on top of the second dielectric liner.


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