The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Nov. 23, 2021
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yang Zhang, Beijing, CN;

Bin Zhou, Beijing, CN;

Ning Liu, Beijing, CN;

Jun Liu, Beijing, CN;

Peng Wang, Beijing, CN;

Lei Zhou, Beijing, CN;

Duoduo Wang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/80 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/80522 (2023.02); H10K 59/1201 (2023.02);
Abstract

A light-emitting substrate includes: a substrate; and at least one coupling portion and at least one auxiliary cathode pattern disposed on the substrate. Each auxiliary cathode region is provided with a coupling portion and an auxiliary cathode pattern coupled to the coupling portion. The auxiliary cathode pattern includes at least one disconnection portion, and each disconnection portion includes first, second and third conductive pattern layers. An orthographic projection of an edge of the second conductive pattern layer on the substrate is located within orthographic projections of edges of the third and first conductive pattern layers on the substrate. A total perimeter of at least one orthographic projection, on the substrate, of at least one edge of at least one third conductive pattern layer in the at least one disconnection portion is greater than a perimeter of an orthographic projection of an edge of the auxiliary cathode region on the substrate.


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