The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Mar. 22, 2023
SK Hynix Inc., Icheon, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Sang Su Park, Icheon, KR;
Sung Yool Choi, Daejeon, KR;
Jun Hwe Cha, Daejeon, KR;
Jung Yeop Oh, Daejeon, KR;
SK hynix Inc., Icheon, KR;
Korea Advanced Institute of Science and Technology, Daeieon, KR;
Abstract
A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an AlOlayer. The insertion layer includes an AlOlayer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.