The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Oct. 27, 2023
Applicant:

Infineon Technologies Canada Inc., Ottawa, CA;

Inventor:

Ahmad Mizannojehdehi, Stittsville, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/911 (2025.01); G01R 19/0092 (2013.01); H10D 89/811 (2025.01);
Abstract

A circuit that allows for accurate power transistor current sensing and electrostatic discharge protection. The circuit includes a power field-effect transistor and a sense field-effect transistor. The sense transistor current is proportional to (but much smaller than) the power transistor current. Thus, the power transistor current may be measured by measuring instead the sense transistor current. The gate nodes of the transistors are connected together, and the drain nodes of the transistors are connected together. However, the source nodes of the transistors are not directly connected to each other, and are instead connected together via a protective resistor. When the circuit is exposed to electrostatic discharge at the source of the sense transistor, the influx of charge that would have otherwise damaged the sense transistor is instead shared between both transistors via the protective resistor.


Find Patent Forward Citations

Loading…