The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Nov. 28, 2023
Leadtrend Technology Corporation, Zhubei City, TW;
Tsung-Chien Wu, Zhubei City, TW;
Jhen-Hong Li, Zhubei City, TW;
Chih-Wen Hsiung, Zhubei City, TW;
Cheng-Sheng Kao, Zhubei City, TW;
LEADTREND TECHNOLOGY CORPORATION, Zhubei City, TW;
Abstract
Disclosed is a high-voltage device with ESD robustness. The high-voltage device is formed on a surface of a semiconductor substrate of a first type. A deep well of a second type opposite to the first type is formed on the surface. A filed isolation layer on the surface separates a drain active region from a source active region, and a control gate on top of the field isolation layer serves as a gate electrode of the high-voltage device. A first well of the second type at least partially overlaps the source active region, extends below the field isolation layer and at least partially overlaps the control gate. A buried layer of the first type at a bottom of the deep well has an extensive portion below the control gate. The deep well provides a conductive channel allowing current to flow from the drain active region to the source active region.