The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Jun. 21, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Nicolas Jean Loubet, Guilderland, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Maruf Amin Bhuiyan, Albany, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 30/6219 (2025.01);
Abstract
A semiconductor device includes a p-type field-effect transistor including first channels made of silicon having a () crystallographic orientation. The semiconductor device further includes an n-type field-effect transistor including second channels made of silicon having a () crystallographic orientation. The semiconductor device further includes a gate surrounding the first channels and the second channels.