The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Jul. 06, 2022
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Viet Thanh Dinh, Leuven, BE;

Asanga H Perera, West Lake Hills, TX (US);

Arjan Mels, Wijchen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6217 (2025.01); H10D 30/0241 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10D 86/011 (2025.01);
Abstract

A semiconductor device and methods of forming the same include a semiconductive fin protruding vertically from a body region and extending along a first direction, an insulator material above the body region and surrounding a lower portion of the fin, and a gap region between first and second ends of the semiconductive fin where at least a top portion of the semiconductive fin is absent. The device includes current terminals coupled to first and second ends of the fin, and a gate electrode and a gate extension coupled to the fin. The gate electrode surrounds the top portion of the semiconductive fin and is separated from the semiconductive by a gate insulator material. The gate extension has a first end adjacent to the gate electrode and a second end above the body region within the gap region.


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