The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Jun. 21, 2022
Applicant:

Zhuhai Chuangfeixin Technology Co., Ltd., Zhuhai, CN;

Inventors:

Li Li, Fremont, CA (US);

Zhigang Wang, Femont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01);
U.S. Cl.
CPC ...
H10B 43/30 (2023.02);
Abstract

A storage device for storing electron charges includes a substrate, a tunnel oxide layer formed on the substrate, a silicon-rich nitride layer comprising silicon nitride on the tunnel oxide layer, and a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide. The electron traps in the modulated interface layer have deeper trap depths than in the silicon-rich nitride layer.


Find Patent Forward Citations

Li, Li. (2026). Memory storage device and method of manufacturing the same (U.S. Patent No. 12598755). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12598755

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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