The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Mar. 01, 2022
Kioxia Corporation, Tokyo, JP;
Shinya Arai, Yokkaichi, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes a stack, a columnar body, and a second conductive layer. The stack includes a plurality of first conductive layers and a plurality of insulating layers. In the stack, the plurality of first conductive layers and the plurality of insulating layers are alternately stacked one by one in a first direction. The second conductive layer is connected to the columnar body. The columnar body includes an insulating core, a memory film, and a semiconductor channel. The memory film is provided between the plurality of first conductive layers and the insulating core. The semiconductor channel is provided between the insulating core and the memory film. An upper surface of the insulating core is located lower than an upper end of the columnar body. The second conductive layer has a main body portion and a protrusion. The protrusion protrudes from the main body portion toward the upper surface of the insulating core, and extends in the first direction within the columnar body. The protrusion is in contact with the semiconductor channel on a bottom surface or a side surface of the protrusion.