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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12598744 B1

PDFFull Text
Date of Patent:
Apr. 07, 2026

Filed:

May. 18, 2022

Semiconductor device and electronic system including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung-Min Hwang, Hwaseong-si, KR;

Dongsung Woo, Suwon-si, KR;

Tae Gon Lee, Seoul, KR;

Bongtae Park, Seoul, KR;

Jae-Joo Shim, Suwon-si, KR;

Tae-Chul Jung, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Meiya Li

Int. Cl.
CPC ...
H10B 41/40 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01); H10B 80/00 (2023.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H10B 41/40 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10B 80/00 (2023.02); G11C 16/0483 (2013.01);
Abstract

A semiconductor device and an electronic system including the same are disclosed. The semiconductor device may include a substrate including a cell array region and a connection region, the cell array region comprising a center region and an outer region; an electrode structure including electrodes and pads; vertical structures on the cell array region and penetrating the electrode structure; and a separation insulating pattern penetrating and dividing an upper electrode, which is one of the electrodes, into at least two portions arranged in a second direction crossing the first direction. The separation insulating pattern comprises a first portion and a second portion, the first portion is between at least some of the central vertical structures, and the second portion is spaced apart from the first portion such that, when viewed in the plan view, the second portion is between at least some of the peripheral vertical structure.

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