The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Apr. 06, 2023
Via Technologies, Inc., New Taipei City, TW;
Ke-Yuan Chen, New Taipei City, TW;
Tzu-Chun Liu, New Taipei City, TW;
VIA TECHNOLOGIES, INC., New Taipei City, TW;
Abstract
An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes first and second N-type and P-type and third P-type doped regions in the first and second N-type well regions in a P-type semiconductor substrate. First and second P-type well regions are in the first N-type well region. Third N-type, fourth P-type and N-type and fifth P-type doped regions are in the first and second P-type well regions. Fifth N-type and sixth P-type doped regions are in the third P-type well region in the second N-type well region. The first and second N-type doped regions are directly electrically connected to the fifth and sixth P-type doped regions, respectively. The first P-type and fifth N-type, the second P-type and third N-type, and the third P-type doped region and the fourth N-type and P-type doped regions are electrically connected to input/output, power supply and ground terminals.