The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Jun. 25, 2024
Applicant:
Stmicroelectronics International N.v., Geneva, CH;
Inventors:
Radouane Habhab, Marseilles, FR;
Vincenzo Della Marca, Marseilles, FR;
Nadia Miridi ép Seroschtanoff, Auriol, FR;
Pascal Masson, Valbonne, FR;
Franck Melul, Aubagne, FR;
Madjid Akbal, Trets, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); H10B 43/27 (2023.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); H10B 43/27 (2023.02); H10D 30/696 (2025.01); H10D 30/699 (2025.01);
Abstract
The non-volatile memory device includes memory cells including a control gate vertically buried in a semiconductor substrate doped with a first type of dopant and a dielectric interface able to trap electrical charges covering sides of the control gate facing the semiconductor substrate. The device furthermore includes a vertical implanted region of a second type of dopant opposite to the first type located along the sides of the control gate in the semiconductor substrate.