The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Mar. 30, 2022
The Trustees of the University of Pennsylvania, Philadelphia, PA (US);
Deep Jariwala, Philadelphia, PA (US);
Roy H. Olsson, III, Phoenixville, PA (US);
Eric Andrew Stach, Swarthmore, PA (US);
Xiwen Liu, Philadelphia, PA (US);
Dixiong Wang, Milpitas, CA (US);
Jeffrey Zheng, Philadelphia, PA (US);
Merrilyn Mercy Adzo Fiagbenu, Philadelphia, PA (US);
The Trustees of the University of Pennsylvania, Philadelphia, PA (US);
Abstract
Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells, search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, with high on/off and self-rectifying ratios. Cells may be formed, for example, with two diodes that are oppositely polarized, and may be achieved without transistors to form, for example, 0T-2R structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile