The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Mar. 10, 2022
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Lui Sakai, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
Provided is a memory device that includes a magnetic memory element, an auxiliary magnetic field application unit, and a write control unit, in which the magnetic memory element includes a reference layer having a fixed magnetization direction, and a storage layer and having a reversible magnetization direction, and that stores data in association with two states of a parallel state and an anti-parallel state, the auxiliary magnetic field application unit applies an auxiliary magnetic field supporting transition of the magnetic memory element from the parallel state to the anti-parallel state, and the write control unit performs initialization by applying an initialization voltage and an initialization magnetic field to the magnetic memory element to bring the magnetic memory element into the anti-parallel state, and writing by performing state inversion to apply a state inversion voltage and a state inversion magnetic field to the initialized magnetic memory element, according to the data.