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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12595546 B1

PDFFull Text
Date of Patent:
Apr. 07, 2026

Filed:

May. 12, 2022

Method for manufacturing silicon-coated copper, silicon-coated anti-oxidation copper using same, and semiconductor device using same

Applicant:

Pusan National University Industry-university Cooperation Foundation, Busan, KR;

Inventors:

Se Young Jeong, Busan, KR;

Su Jae Kim, Busan, KR;

Assignee:

PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, Busan, KR;

Attorney:

Paratus Law Group, PLLC

Primary Examiner:

Lawrence D Ferguson

Int. Cl.
CPC ...
C23C 14/16 (2006.01); C23C 14/08 (2006.01); C30B 23/02 (2006.01); C30B 29/06 (2006.01); C30B 29/22 (2006.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
C23C 14/165 (2013.01); C23C 14/08 (2013.01); C30B 23/025 (2013.01); C30B 29/06 (2013.01); C30B 29/22 (2013.01); H10W 72/01938 (2026.01); H10W 72/952 (2026.01); H10W 72/953 (2026.01);
Abstract

A silicon-coated oxidation-resistant copper includes a SiCuOlayer includes a silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed by depositing silicon (Si). The silicon-coated oxidation-resistant copper includes: a copper layer; the SiCuOlayer including the silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed on the copper layer; a first silicon (Si)-oxygen (O) mixed layer formed on the SiCuOlayer; a silicon (Si) layer formed on the first silicon (Si)-oxygen (O) mixed layer; and a second silicon (Si)-oxygen (O) mixed layer formed on the silicon layer (Si) layer.

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Jeong, Se. (2026). Method for manufacturing silicon-coated copper, silicon-coated anti-oxidation copper using same, and semiconductor device using same (U.S. Patent No. 12595546). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12595546

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