The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
May. 25, 2023
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Yoshitaka Kimura, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/053 (2006.01); H01L 23/24 (2006.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H01L 23/053 (2013.01); H01L 23/24 (2013.01); H02M 7/53875 (2013.01);
Abstract
An object is to provide a technique that lowers the self-inductance of a semiconductor device. A semiconductor device includes an insulating substrate having a circuit pattern formed on an upper surface thereof, a semiconductor element mounted on the upper surface of the circuit pattern, and a plurality of electrode terminals each having one end portion bonded to the upper surface of the circuit pattern. The electrode terminals having portions of mutual adjacency of the plurality of electrode terminals are coated with the insulating film having a thickness of less than 100 at least at the portions.