The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Feb. 07, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyun Su Hwang, Siheung-si, KR;
Jun Yun Kweon, Cheonan-si, KR;
Jum Yong Park, Cheonan-si, KR;
Sol Ji Song, Suwon-si, KR;
Dong Joon Oh, Suwon-si, KR;
Chung Sun Lee, Asan-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes an insulating layer on a substrate; a via extending from within the substrate and extending through one face of the substrate and a bottom face of a trench defined in the insulating layer such that a portion of a sidewall and a top face of the via are exposed through the substrate; and a pad contacting the exposed portion of the sidewall and the top face of the via. The pad fills the trench. The insulating layer includes a passivation layer on the substrate, and a protective layer is on the passivation layer. An etch stop layer is absent between the passivation layer and the protective layer. A vertical level of a bottom face of the trench is higher than a vertical level of one face of the substrate and is lower than a vertical level of a top face of the passivation layer.