The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jan. 23, 2023
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Ran He, Yokohama, JP;

Huifang Jiao, Shenzhen, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); H01L 21/02376 (2013.01); H01L 21/02527 (2013.01); H01L 21/042 (2013.01); H01L 21/4803 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 24/32 (2013.01); H01L 2224/32113 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32501 (2013.01); H01L 2924/10157 (2013.01); H01L 2924/13064 (2013.01);
Abstract

Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.


Find Patent Forward Citations

He, Ran. (2026). Semiconductor structure with diamond heat dissipation and manufacturing method thereof (U.S. Patent No. 12593689). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12593689

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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