The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Mar. 14, 2023
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Mitsuo Sano, Kamakura Kanagawa, JP;
Susumu Obata, Yokohama Kanagawa, JP;
Kazuhito Higuchi, Yokohama Kanagawa, JP;
Takayuki Tajima, Sagamihara Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/62 (2006.01); H01G 4/012 (2006.01); H01G 4/33 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 21/62 (2013.01); H01G 4/33 (2013.01); H10D 1/692 (2025.01); H01G 4/012 (2013.01);
Abstract
In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.
Sano, Mitsuo. (2026). Method of manufacturing structure and method of manufacturing capacitor (U.S. Patent No. 12593664). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12593664
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile