The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Aug. 10, 2023
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Weikun Lin, Shamen, CN;
Wen Yi Tan, Fujian, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8418 (2023.02); H10B 63/00 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/8833 (2023.02);
Abstract
The invention provides a resistive random access memory (RRAM) structure, which comprises a lower electrode located on a substrate, a resistance switching layer located on the lower electrode, and an upper electrode located on the resistance switching layer, the resistive random access memory structure has a flat top surface and two inclined sidewalls as viewed from a sectional view, and the maximum width of the resistance switching layer is greater than the maximum width of the upper electrode.