The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Dec. 14, 2023
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Ping MA, Hangzhou, CN;

Xiang Li, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/10 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); G11C 13/0004 (2013.01); H10B 63/10 (2023.02); H10N 70/063 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02);
Abstract

An example phase change memory, as well as an electronic device comprising an example phase change memory, include a plurality of phase change memory cells. Each of the plurality of phase change memory cells includes a first electrode, a phase change body, and a second electrode, which are sequentially arranged in a first direction. The phase change body has a first end face facing the first electrode and a second end face facing the second electrode. The phase change body further includes a convergence portion, and the convergence portion is located between the first end face and the second end face, where a sectional area of the convergence portion in a direction perpendicular to the first direction is relatively smaller than an area of the first end face and an area of the second end face. A preparation method for a phase change memory is also provided.


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