The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Sep. 26, 2022
International Business Machines Corporation, Armonk, NY (US);
Oscar Van Der Straten, Guilderland Center, NY (US);
Shanti Pancharatnam, Albany, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device including a magnetic tunnel junction (MTJ) stack vertically aligned between an annular shaped bottom electrode and an annular shaped top electrode. A semiconductor device including a MTJ stack, vertically aligned between an annular shaped bottom electrode and an annular shaped top electrode, and an encapsulation layer surrounding vertical side surfaces of the MTJ stack, wherein the encapsulation layer does not surround the top electrode nor the bottom electrode. Forming a bottom electrode in a first inter-layer dielectric, forming a reference layer on the first inter-layer dielectric and on the bottom electrode, forming a tunnel barrier layer on the reference layer, forming a free layer on the tunnel barrier layer and patterning the reference layer, the tunnel barrier layer and the free layer into a magnetic tunnel function (MTJ) stack vertically aligned over the bottom electrode, while not patterning the bottom electrode nor the first inter-layer dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile