The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Dec. 22, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Manjin Eom, Hwaseong-si, KR;
Gawon Lee, Suwon-si, KR;
Seungpil Ko, Hwaseong-si, KR;
Kilho Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of manufacturing a memory device includes sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other; forming a magnetic tunnel junction structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; forming a sidewall metal layer by etching a portion of a redeposited metal covering a sidewall of the magnetic tunnel junction structure; performing an oxidizing operation that includes oxidizing an exposed surface of the sidewall metal layer to provide an oxidized sidewall metal layer; and performing an irradiating operation that includes irradiating an ion beam towards the oxidized sidewall metal layer. A sidewall insulating layer covering a sidewall of the magnetic tunnel junction structure is formed by alternately performing the oxidizing operation and the irradiating operation two or more times.