The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Oct. 18, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jaehyun Lee, Yongin-si, KR;

Seulki Kim, Yongin-si, KR;

Seungha Choi, Yongin-si, KR;

Kapsoo Yoon, Yongin-si, KR;

Woogeun Lee, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); G09G 3/3233 (2016.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 71/00 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/123 (2023.02); G09G 3/3233 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 71/00 (2023.02); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10K 59/1201 (2023.02);
Abstract

A display apparatus includes: a substrate; a semiconductor layer on the substrate, formed of an oxide semiconductor, and including a channel semiconductor layer and a first semiconductor layer extending in a first direction from the channel semiconductor layer; a first metal layer on the first semiconductor layer, and located in the first semiconductor layer in a plan view; a first inorganic insulating layer covering the semiconductor layer and the first metal layer and including a first contact hole overlapping the first semiconductor layer and the first metal layer; a first electrode on the first inorganic insulating layer, overlapping the first semiconductor layer and the first metal layer, and electrically connected to the first metal layer and the first semiconductor layer connected to the first metal layer through the first contact hole.


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