The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Sep. 30, 2021
Boe Technology Group Co., Ltd., Beijing, CN;
Caiyu Qu, Beijing, CN;
Yanjun Hao, Beijing, CN;
Huijuan Zhang, Beijing, CN;
Yibing Fan, Beijing, CN;
Dengyun Chen, Beijing, CN;
Zunqing Song, Beijing, CN;
Dong Li, Beijing, CN;
Zheng Liu, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A thin film transistor is provided. The thin film transistor is disposed on a base substrate and includes: a first active layer; a first gate disposed on a side of the first active layer; a first insulating layer disposed on a side of the first gate away from the base substrate; and a source and a drain. The first gate includes a stacked structure including: a first conductive layer; and a first barrier layer disposed on a side of the first conductive layer away from the base substrate, where a side of the first barrier layer away from the base substrate is in direct contact with a side of the first insulating layer proximate to the base substrate. The first barrier layer includes TiNx1, where 0≤x1<0.2, and x1 is a molar ratio of N to Ti.