The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Oct. 14, 2021
Applicant:

Vertilite Co., Ltd., Jiangsu, CN;

Inventors:

Dong Liang, Jiangsu, CN;

Cheng Zhang, Jiangsu, CN;

Assignee:

VERTILITE CO., LTD., Jiangsu, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H01S 5/183 (2006.01); H01S 5/40 (2006.01); H10H 20/00 (2025.01); H10H 20/81 (2025.01); H10H 20/814 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H01S 5/4031 (2013.01); H10H 20/062 (2025.01); H10H 20/81 (2025.01); H10H 20/8142 (2025.01); H01S 5/183 (2013.01);
Abstract

Provided are a semiconductor light source and a driver circuit thereof. The semiconductor light source includes an active layer, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, and a third electrode. The first semiconductor layer and the second semiconductor layer are located on two opposite sides of the active layer. The first electrode is in ohmic contact with the first semiconductor layer. The third electrode is in ohmic contact with the second semiconductor layer. A first dielectric layer is disposed between the first electrode and the second electrode. The first semiconductor layer is a p-type semiconductor layer, and the second semiconductor layer is an n-type semiconductor layer. Alternatively, the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.


Find Patent Forward Citations

Liang, Dong. (2026). Semiconductor light source and driving circuit thereof (U.S. Patent No. 12593540). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12593540

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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