The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Jan. 22, 2021
Applicant:
Poro Technologies Ltd, Cambridge, GB;
Inventors:
Assignee:
PORO TECHNOLOGIES LTD, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/817 (2025.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/814 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/817 (2025.01); H10H 20/01335 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/814 (2025.01); H10H 20/8162 (2025.01); H10H 20/825 (2025.01);
Abstract
A semiconductor structure comprises a layer of a first III-nitride material having a first lattice dimension; a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension; and a porous region of III-nitride material disposed between the layer of first III-nitride material and the non-porous layer of the second III-nitride material. An optoelectronic semiconductor device, an LED, and a method of manufacturing a semiconductor structure are also provided.