The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

May. 18, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Juyeong Kim, Suwon-si, KR;

Changhyun Park, Suwon-si, KR;

Eunsub Shim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H04N 25/57 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/803 (2025.01); H04N 25/57 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01); H10F 39/18 (2025.01);
Abstract

An image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the pixels includes a photodiode, a transfer transistor, first to third floating diffusion nodes, a first capacitor, a second capacitor, a third capacitor, a first switch transistor, a second switch transistor, and a reset transistor. The second switch transistor is configured to turn off in a first period and to turn on in a second period of an exposure period of the photodiode, and the reset transistor is configured to turn on in the first period and to turn off in the second period of the exposure period of the photodiode.


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