The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jan. 04, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungwook Lim, Suwon-si, KR;

Eun Sub Shim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H04N 25/59 (2023.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H04N 25/59 (2023.01); H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01);
Abstract

Disclosed is an image sensor which includes a photo diode that generates charges based on an incident light, a first floating diffusion region that stores the charges generated by the photo diode, a first boosting capacitor that is connected with the first floating diffusion region, a second floating diffusion region that is disposed to be spaced from the first floating diffusion region and includes a first end connected with a gate of a drive transistor, a transfer transistor that electrically connects the photo diode with the first floating diffusion region in response to a transfer signal, and a floating diffusion region transistor that electrically connects the first floating diffusion region with the second floating diffusion region in response to a floating control signal.


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