The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Mar. 15, 2023
Applicant:
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Inventor:
Nozomu Harada, Tokyo, JP;
Assignee:
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract
An Nlayer and a Player that are impurity regions at a bottom portion are formed using as etching masks top first mask material layers and SiN layers surrounding Si pillars and formed in a self-aligned manner with respect to the Si pillars and a SiO2 layer. Then, a SiO2 layer is formed that has an upper surface located at the level of the bottom portions of the Nlayer and the Player. Then, a W layer is selectively formed on exposed side faces of the Nlayer and the Player. Then, a contact hole for connection to a wire metal layer is formed above the W layer as seen in plan view.