The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Sep. 14, 2021
Applicant:

Analog Devices, Inc., Wilmington, MA (US);

Inventors:

James G. Fiorenza, Carlisle, MA (US);

Daniel Piedra, Somerville, MA (US);

Assignee:

Analog Devices, Inc., Wilmington, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H01L 23/367 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/66 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/251 (2025.01); H01L 23/3672 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/66 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/235 (2025.01); H10D 62/8503 (2025.01); H10D 64/511 (2025.01);
Abstract

In one or more implementations, a semiconductor device can include a first compound semiconductor device coupled to a second compound semiconductor device coupled in a face-to-face arrangement. The first compound semiconductor device can be coupled to the second compound semiconductor device such that a cavity is formed that includes a first gate electrical contact of the first compound semiconductor device and a second gate electrical contact of the second compound semiconductor device. A gap can be present between the first gate electrical contact and the second gate electrical contact.


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