The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Dec. 03, 2020
Tankeblue Semiconductor Co., Ltd., Beijing, CN;
Xinjiang Tankeblue Semiconductor Co. Ltd, Shihezi, CN;
Jiangsu Tankeblue Semiconductor Co., Ltd, Xuzhou, CN;
Chunjun Liu, Beijing, CN;
Yanfang Lou, Beijing, CN;
Tonghua Peng, Beijing, CN;
Bo Wang, Beijing, CN;
Ning Zhao, Beijing, CN;
Yu Guo, Beijing, CN;
Jian Yang, Beijing, CN;
Ping Zhang, Xuzhou, CN;
Yu Zou, Xuzhou, CN;
Fan Yang, Shihezi, CN;
TANKEBLUE SEMICONDUCTOR CO., LTD, Beijing, CN;
XINJIANG TANKEBLUE SEMICONDUCTOR CO. LTD., Xinjiang, CN;
JIANGSU TANKEBLUE SEMICONDUCTOR CO., LTD, Jiangsu, CN;
Abstract
A silicon carbide single crystal wafer and a preparation method therefor, a silicon carbide crystal and a preparation method therefor, and a semiconductor device. The surface of the silicon carbide single crystal wafer is such that an included angle between a normal direction and a c direction is 0-8 degrees, and aggregated dislocations on the silicon carbide single crystal wafer are less than 300/cm; the aggregated dislocation is a dislocation aggregated condition in which the distance between the geometric centers of any two corrosion pits in the corrosion pits obtained after corrosion of melted KOH is less than 80 microns. Even if the dislocation density is relatively high, the aggregated dislocation density is relatively small, thereby increasing the yield of a silicon carbide-based devices.