The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Mar. 29, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Thomas Kurzmann, Villach, AT;
Christian Philipp Sandow, Haar, DE;
Thomas Soellradl, Feldkirchen, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 62/127 (2025.01); H10D 12/481 (2025.01); H10D 62/393 (2025.01);
Abstract
An IGBT includes a drift region of a first conductivity type, a plurality of trenches laterally confining both first type mesas having a respective source region and a respective body region and second type mesas. A shield region does for example not laterally overlap with the second type mesa, but only with the first type mesa.