The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Jun. 23, 2023
Will Semiconductor (Shanghai) Co. Ltd., Shanghai, CN;
WILL SEMICONDUCTOR (SHANGHAI) CO. LTD., Shanghai, CN;
Abstract
A semiconductor device includes: an anode electrode, formed on a front surface of a semiconductor substrate; a cathode electrode, formed on a back surface; a P layer, formed on the anode electrode side; an N layer, formed on the cathode electrode side; an N+ layer, arranged between the P layer and the N layer and having a higher carrier concentration than the N layer; and an anode trench, which extends from the front surface of the semiconductor substrate toward the back surface side thereof and extends to the N+ layer through the P layer, and in which an insulating film is formed between the peripheral N+ layer, and a conductive material arranged inside is connected to the anode electrode.