The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Dec. 30, 2022
Fudan University, Shanghai, CN;
Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai, CN;
Chunlei Wu, Shanghai, CN;
Yumin Xu, Shanghai, CN;
Boqian Shen, Shanghai, CN;
Fei Zhao, Shanghai, CN;
Zichen Yang, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Min Xu, Shanghai, CN;
FUDAN UNIVERSITY, Shanghai, CN;
SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD., Shanghai, CN;
Abstract
A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrate, a fin channel region, a first source region, and a first drain region; the height of the second source region is not lower than the height of the substrate between the first source region and the first drain region; the first source region the first drain region and the second drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, the second source region is doped with second ions. This scheme can realize hybrid conduction of fin channel diffusion drift current and bottom channel band-to-band tunneling current, thus obtaining better ultra-steep switching characteristics.