The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Nov. 29, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jie Huang, Beijing, CN;

Ce Ning, Beijing, CN;

Zhengliang Li, Beijing, CN;

Hehe Hu, Beijing, CN;

Jiayu He, Beijing, CN;

Nianqi Yao, Beijing, CN;

Kun Zhao, Beijing, CN;

Feifei Li, Beijing, CN;

Liping Lei, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01);
Abstract

The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.


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