The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Oct. 10, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangmin Kang, Hwaseong-si, KR;
Junghwan Kim, Seoul, KR;
Hyungjoon Kim, Yongin-si, KR;
Jihoon Choi, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes gate electrodes on a substrate and a memory channel structure extending through the gate electrodes. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The memory channel structure extends in the vertical direction on the substrate. The memory channel structure includes a first filling pattern extending in the vertical direction, a channel on a sidewall of the first filling pattern, and a charge storage structure on a sidewall of the channel. The first filling pattern includes a material having a thermal conductivity equal to or more than about 100 W/m·K at a temperature of about 25° C.