The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Sep. 27, 2022
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Hsih-Yang Chiu, Taoyuan City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10W 90/00 (2026.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10W 90/00 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01);
Abstract

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a semiconductor layer, and a word line. The bit line is disposed over the substrate. The semiconductor layer is disposed over the bit line. The word line abuts the semiconductor layer. The word line has a lower surface facing the substrate and an upper surface opposite to the lower surface. The semiconductor layer includes a first doped region with a first conductive type, a second doped region with a second conductive type opposite to the first conductive type. The first doped region is disposed between the second doped region and the bit line. The first boundary between the first doped region and the second doped region is substantially aligned with the lower surface of the word line.


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Chiu, Hsih-Yang. (2026). Semiconductor device having semiconductor channel layer and method of manufacturing the same (U.S. Patent No. 12593439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12593439

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