The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Sep. 15, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yangdoo Kim, Seoul, KR;
Yonghwan Kim, Hwaseong-si, KR;
Sangwuk Park, Hwaseong-si, KR;
Sunghyun Park, Hwaseong-si, KR;
Jinyoung Park, Suwon-si, KR;
Minkyu Suh, Yongin-si, KR;
Jungpyo Hong, Gwangmyeong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor memory device includes a substrate including a memory cell region, a plurality of capacitor structures arranged in the memory cell region of the substrate and including a plurality of lower electrodes, a capacitor dielectric layer, and an upper electrode, a first support pattern contacting sidewalls of the plurality of lower electrodes of the plurality of capacitor structures to support the plurality of lower electrodes, and a second support pattern located at a higher vertical level than a vertical level of the first support pattern and contacting the sidewalls of the plurality of lower electrodes to support the plurality of lower electrodes. The plurality of lower electrodes have a plurality of recessed electrode portions, respectively, in upper portions of the plurality of lower electrodes.