The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jul. 19, 2021
Applicant:

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou City, CN;

Inventors:

Yi-Wang Jhan, Taichung City, TW;

Fu-Che Lee, Taichung City, TW;

Gang-Yi Lin, Taitung County, TW;

An-Chi Liu, Tainan City, TW;

Yifei Yan, Jinjiang City, CN;

Yu-Cheng Tung, Kaohsiung City, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/02 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor structure includes a substrate, a contact structure disposed on the substrate, and two first gate structures disposed on the substrate and at two sides of the first contact structure. The contact structure has a T-shaped cross-sectional profile having a first portion contacting the substrate and a second portion disposed on the first portion. A top surface of the second portion of the contact structure is flush with top surfaces of the two first gate structures.


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