The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Nov. 14, 2023
Hangzhou Hfc Semiconductor Co., Hangzhou, CN;
Hangzhou HFC Semiconductor Co., Hangzhou, CN;
Abstract
An eDRAM and a method for making it are disclosed. In the method, a pad oxide layer and a pad nitride layer formed over a surface of a substrate are removed after an active area and a deep trench filled with polysilicon are formed, followed by the formation of a re-deposited oxide layer and a re-deposited nitride layer. The re-deposited nitride layer has greater uniformity than the pad nitride layer that has undergone the formation of the deep trench. An isolation recess and a recess extension are then formed at one side of the deep trench and then filled with an isolation dielectric. In this process, the re-deposited nitride layer can be utilized to control the height and flatness of a top surface of the isolation dielectric, thus ensuring effective isolation of the polysilicon from a word line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile